advanced power p-channel enhancement mode electronics corp. power mosfet small & thin package bv dss -20v fast switching characteristic r ds(on) 42m capable of 1.8v gate drive i d -4.2a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 120 /w rthj-l thermal resistance junction-lead max. 70 /w data and specifications subject to change without notice storage temperature range -55 to 150 total power dissipation 1 linear derating factor continuous drain current 3 -3.3 pulsed drain current 1 -30 gate-source voltage 8 continuous drain current 3 -4.2 parameter rating drain-source voltage - 20 200312072-1/4 ap4425go -55 to 150 rohs-compliant product 0.01 operating junction temperature range thermal data parameter the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. g d s d s s d d s s g tssop-8
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =-1ma - -0.01 - v/ : r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-4.0a - - 42 m v gs =-2.5v, i d =-4.0a - - 52 m v gs =-1.8v, i d =-3.0a - - 70 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.3 - -1 v g fs forward transconductance v ds =-5v, i d =-4a - 4 - s i dss drain-source leakage current (t j =25 o c) v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-16v ,v gs =0v - - -25 ua i gss gate-source leakage v gs = 8v - - 100 na q g total gate charge 2 i d = -4a - 21 34 nc q gs gate-source charge v ds = -10v - 6 - nc q gd gate-drain ("miller") charge v gs = -4.5v - 4.4 - nc t d(on) turn-on delay time 2 v ds = -10v - 13 - ns t r rise time i d = -4a - 39 - ns t d(off) turn-off delay time r g = 3.3 ? v gs = -5v - 24 - ns t f fall time r d = 2.5 -72- ns c iss input capacitance v gs =0v - 1720 2752 pf c oss output capacitance v ds =-10v - 275 - pf c rss reverse transfer capacitance f=1.0mhz - 215 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 t j =25 : , i s =-0.86a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s = -4a, v gs =0 v , - 23 - ns q rr reverse recovery charge di/dt=100a/s - 16 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test. 3.surface mounted on 1 in 2 copper pad of fr4 board t 10s. 2/4 ap4425go this product is electrostatic sensitive, please handle with caution. this product has been qualified for use in consumer applications. applications or use in life support or other similar mission-critical devices or systems are not authorized.
ap4425g o fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 10 30 50 70 02468 -v gs (v) r ds(on) (m ) i d = -3.0a t a =25 o c 0 5 10 15 20 25 30 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -5.0v -4.5v -3.5v -2.5v v g = -1.8v 0 5 10 15 20 25 30 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -5.0v -4.5v -3.5v -2.5v v g = -1.8 v 0.4 0.7 1.0 1.3 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -4.0a v g = -4.5v 0 2 4 6 8 10 0 0.4 0.8 1.2 -v sd (v) -i s (a) t j =25 o c t j =150 o c 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform ap4425go 4/4 0.01 0.1 1 10 100 0.1 1 10 100 -v ds (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + ta r thja =120 o c/w t t 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.02 0 2 4 6 8 0 5 10 15 20 25 30 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -10v i d = -4a 100 1000 10000 1 5 9 13172125 -v ds (v) c (pf) f =1.0mh z c iss c oss c rss q v g q gs q gd q g charge -4.5v 0 5 10 15 20 25 30 01234 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v
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